《集成电路应用》第35卷第7期（总第298期） 2018年7月
《集成电路应用》第35卷第7期（总第298期） 2018年7月
研究与设计
P1
一种基于接收信号强度指示策略的射频能量收集器
马祺云，许江涛，覃正才
摘要：基于 0.18μm SMIC RF CMOS 工艺，采用最新的低电压低功耗高效率的差分驱动CMOS 整流器结构单元，设计了应用于无线体域网（WBAN）的无直流电源供电的射频能量收集器。提出通过接收信号强度指示的策略，来提升射频能量收集器对无线体域网中的射频能量的收集效率，扩大射频能量的可接收范围。基于这一技术，设计的射频能量收集器可以接收与转换 -8 dBm~10 dBm 的射频信号，输出 2 V 的较稳定电压，在-5 dBm 电压转换效率 VCE 达到 84.8%，能量转换率达到 16.7%。
关键词：集成电路设计；无线体域网；射频能量收集；差分驱动 CMOS 整流器
中图分类号：TN402；TN929.5 文章编号：1674-2583(2018)07-0001-05
DOI：10.19339/j.issn.1674-2583.2018.07.001
中文引用格式：马祺云，许江涛，覃正才.一种基于接收信号强度指示策略的射频能量收集器[J]. 集成电路应用, 2018, 35(07): 1-5.
A RF-to-DC Energy Harvester Based on Received Signal Strength Indication Strategy
Ma Qiyun, Xu Jiangtao, Qin Zhengcai
Abstract: A RF DC energy harvester without DC power supply using a structure of the latest high-efficiency low-voltage and low-power CMOS differential-drive CMOS rectifier is presented in this work, which is applied to Wireless Body Area Network (WBAN).The circuit is implemented in a 180 nm SMIC RF CMOS process. To improve the efficiency of RF energy collector to collect radio frequency energy in the WBAN, a Received Signal Strength Indication (RSSI) strategy is proposed, which has a remarkable contribution in expanding the receivable range of RF energy. Based on this strategy, -8 dBm ~ 10 dBm RF signal can be received and converted into a stable DC output of 2 V.At the input power level of -5 dBm , the proposed energy harvester achieves a peak voltage conversion efficiency of 16.7% and a peak power conversion efficiency of 16.7% in the simulation.
Key words: integrated circuit design, WBAN, RF energy harvesting, differential-drive CMOS rectifier
P6
一种利用缓存技术降低视频编解码芯片外部访问带宽的方法
邵瑾，方琼
摘要：降低视频编解码芯片外部访问带宽是视频编解码芯片架构设计的一个重要挑战。针对视频编解码的去方块滤波算法（DBK）阶段，利用片上 SRAM 缓存技术，有效地降低了芯片外存访问带宽。根据多种视频编解码标准，包括 HEVC、H.264、AVS2 等，给出了所需片上缓存的大小映射公式，和芯片外存访问带宽降低的理论值和实验值。
关键词：集成电路设计；视频；编解码；带宽；片上 SRAM 缓存
中图分类号：TN 402；TN919.81 文章编号：1674-2583(2018)07-0006-04
DOI：10.19339/j.issn.1674-2583.2018.07.002
中文引用格式：邵瑾，方琼.一种利用缓存技术降低视频编解码芯片外部访问带宽的方法[J]. 集成电路应用, 2018, 35(07): 06-09.
Using Cache Technology to Reduce the External Access Bandwidth of Video Codec Chip
SHAO Jin, FANG Qiong
Abstract: Reducing the external access bandwidth of video codec chip is an important challenge in the design of video codec chip architecture. In view of the video coding and decoding algorithm of deblocking filter (DBK), the on-chip SRAM cache technology is used to effectively reduce the memory access bandwidth of chip. According to a variety of video codec standards, including HEVC, H.264, AVS2, and so on, the size mapping formula of the required caching is given, and the theoretical value and experimental value of the chip external memory access bandwidth reduction are also given.
Key words: integrated circuit design, video, codec, bandwidth, on chip SRAM caching
P10
一种移动智能通信终端音频设计方案
许华
摘要：在移动智能通信终端设计过程中，音频设计是比较重要的一部分，不仅需要考虑到音频应用的功能实现，还需要考虑音频使用场景以及场景切换，同时用户使用体验和节省功耗也是设计时比较重要的关注点。而在移动智能通信终端之前的功能机时代，通信基带处理器需要负责除语音通信之外的其他音频功能，通常会带有专门处理音频的 DSP。上海兆芯集成电路有限公司CBP5850 芯片就包含了这样的通信基带处理器。
关键词：集成电路设计；移动通信；手机；音频；AP，Modem；PCM；I2S；蓝牙；IPC
中图分类号：TN 402；TN934.3 文章编号：1674-2583(2018)07-0010-04
DOI：10.19339/j.issn.1674-2583.2018.07.003
中文引用格式：许华.一种移动智能通信终端音频设计方案[J]. 集成电路应用, 2018, 35(07): 10-13.
An Audio Design for Smart Mobile Phone
XU Hua
Abstract: Audio design is very important for smart mobile phone design, besides the implementation of audio function, the audio scenario and scenario switching must be considered carefully, the user experience and power consumption are also key points. In feature phone stage, communication baseband processor will handle voice and other audio function. Normally, there will be a dedicated audio DSP. Shanghai Zhaoxin's CBP5850 SoC has this kind of communication baseband processor.
Key words: integrated circuit design, mobile communications, mobile phones, audio, AP, modem, PCM, I2S, bluetooth, IPC
P14
长短期记忆 LSTM 神经形态芯片设计的两步映射方法
何峰，王冠睿，裴京
摘要：长短期记忆（LSTM，Long Short-Term Memory）网络广泛应用于各个领域，天机系列芯片是的神经形态芯片，天机 2 是最新版本，两步映射方法是研究 LSTM 网络到天机 2.0 的映射工具链。LSTM 网络计算比一般神经网络复杂，一般四步运算，映射到神经形态芯片也是四步，四步运算耗时很高，对于很多要求高速度的运算要求满足不了，如军工、金融等领域。为了提高速度满足高速度的人工智能中 LSTM 网络的需求，提出了一种两步 LSTM 网络的映射解决方案，进行了相关的计算推导，并在实验仿真平台进行了仿真验证。虽然 Core 资源开销是四步映射的几十、几百倍，但两步映射方法使得速度提高了一倍，在对速度要求高对硬件开销不高的领域，益处极大。
关键词：集成电路设计；神经形态芯片；长短期记忆；两步映射
中图分类号：TN402；TP183 文章编号：1674-2583(2018)07-0014-04
DOI：10.19339/j.issn.1674-2583.2018.07.004
中文引用格式：何峰，王冠睿，裴京.长短期记忆LSTM神经形态芯片设计的两步映射方法[J]. 集成电路应用, 2018, 35(07): 14-17.
Two Step Mapping for Long Short-Term Memory Neural Chip Design
HE Feng, WANG Guanrui, PEI Jing
Abstract: LSTM network is widely used in various fields. Tianji series chip is the neural form chip developed and designed by the Tsinghua University brain research center. Tianji 2 is the latest version. This paper studies the mapping tool chain from LSTM network to sky 2. LSTM network computing is more complex than the general neural network. Generally, the four step operation, mapping to the neural morphology chip is also four steps, the four step operation is very time-consuming, for many demands for high speed operation, such as military, financial and other fields. In order to improve the speed to meet the needs of LSTM network in high speed artificial intelligence, I put forward a mapping solution of two step LSTM network, and carried out the related calculation and deduction, and the simulation verification was carried out in the experimental simulation platform. Although the Core resource overhead is a few hundred times the four step map, it has doubled the speed and is very useful in areas with high speed requirements and low hardware overhead.
Key words: integrated circuit design, neuromorphic chip, long and short term memory, two step mapping
P18
检入管理 CIMS 系统中的集合覆盖问题 SCP 研究
方琼，邵瑾
摘要：在图形处理芯片 GPU 芯片架构设计过程中，针对 C-model 源代码管理，设计了一套检入管理系统 CIMS（Check In Management System），并根据集合覆盖原理提出一种新的优选策略，用于筛选 CIMS 系统中的测试用例。实验表明，该算法获得的测试集合，在时间约束条件下，能有效覆盖已有代码，充分发挥预检功能。
关键词：集成电路设计；源码版本管理；集合覆盖；测试用例筛选；贪心算法
中图分类号：TN402；TP301.6 文章编号：1674-2583(2018)07-0018-04
DOI：10.19339/j.issn.1674-2583.2018.07.005
中文引用格式：方琼，邵瑾.检入管理CIMS系统中的集合覆盖问题SCP研究[J]. 集成电路应用, 2018, 35(07): 18-21.
Research on Set Covering Problem in Check in Management System
FANG Qiong, SHAO Jin
Abstract: In GPU architecture design, a check in management system is designed for the management of the C-model source code. In order to select the test cases in CIMS, an algorithm is proposed based on the principle of set covering. Experimental studies are being performed that demonstrate the effectiveness of the algorithm on code coverage improvementsin the limitation of time.
Key words: IC design, source code version control, set covering, test case selection, greedy algorithm
P22
一种基于 SoC 的低功耗设计
郭涛，张修钦，罗军，张晓晨，杨斌
摘要：随着集成电路设计规模的增大和设计复杂度的提高，功耗成为片上系统（SoC，System on Chip）设计中的关键指标之一。通过综述并讨论SoC系统的不同工作模式，提出了一种低功耗设计策略，通过对逻辑电路和存储器进行电源管理，能够有效地降低 SoC 芯片的运行功耗。
关键词：集成电路设计；SoC；低功耗；电源管理
中图分类号：TN402；TN47 文章编号：1674-2583(2018)07-0022-03
DOI：10.19339/j.issn.1674-2583.2018.07.006
中文引用格式：郭涛，张修钦，罗军，张晓晨，杨斌.一种基于SOC的低功耗设计[J]. 集成电路应用, 2018, 35(07): 22-24.
Low Power Design Based on SoC
GUO Tao, ZHANG Xiuqin, LUO Jun, ZHANG Xiaochen, YANG Bin
Abstract: With the increase of the scale of IC design and the improvement of design complexity, Power consumption is one of the key indexes in the design of SoC (System on Chip). In this paper, a low power design strategy is proposed by summarizing and discussing the different working modes of the SoC system. The power management of the logic circuit and memory can effectively reduce the power consumption of the SoC chip.
Key words: integrated circuit design, SoC, low power consumption, power management
工艺与制造
P25
不同设计参数对 SOI 射频开关谐波性能影响的分析研究
莘海维
摘要：基于 0.2μm SOI RF 工艺平台，设计了串联支路，并联支路，单刀单掷，单刀双掷等电路结构，研究单级宽度，级联数目等设计参数对射频开关谐波性能的影响。通过实验数据，分析讨论各参数对射频开关谐波性能的影响变化趋势，阐明了产生变化的机制，为射频开关设计提供参考。
关键词：集成电路制造；SOI；射频开关；谐波
中图分类号：TN405 文章编号：1674-2583(2018)07-0025-04
DOI：10.19339/j.issn.1674-2583.2018.07.007
中文引用格式：莘海维.不同设计参数对 SOI 射频开关谐波性能影响的分析研究[J]. 集成电路应用, 2018, 35(07): 25-28.
Analysis the Harmonic Performance of SOI RF Switch with Different Design Structure
XIN Haiwei
Abstract: Base on commercial 0.2μm SOI RF process platform, the influence of stack, width on harmonic performance characteristics of test structure for SOI RF switch application is investigated, including series branch, shunt branch, single-pole-single-throw, and single-pole-double-throw. The impacts of different design on RF switch harmonic performance are discussed in detail. The result can be reference as circuit design.
Key words: IC manufacturing, SOI, radio frequency switch, harmonic
P29
集成电路后段光刻胶去除技术进展
彭洪修，刘兵，陈东强
摘要：光刻胶去除是集成电路制造的关键工艺之一。随着集成电路技术的发展，先后出现了铝钨金属连接、铜互联大马士革工艺，尤其是硬掩膜铜互联大马士革工艺的出现，对光刻胶去除工艺提出了极大的挑战。结合图形化工艺技术进展，溶剂类光刻胶去除剂、羟胺类光刻胶去除剂、含氟类半水性光刻胶去除剂、双氧水类水性光刻胶去除剂先后成为市场主流。以集成电路图形化工艺发展为主线，对不同种类光刻胶去除剂进行概括介绍，并分析其优缺点，为中国光刻胶去除技术发展提供借鉴意义。
关键词：集成电路制造；图形化工艺；光刻胶去除；工艺技术发展
中图分类号：TN405 文章编号：1674-2583(2018)07-0029-04
DOI：10.19339/j.issn.1674-2583.2018.07.008
中文引用格式：彭洪修，刘兵，陈东强.集成电路后段光刻胶去除技术进展[J]. 集成电路应用, 2018, 35(07): 29-32.
The Development of Photoresist Stripper in Integrate Circuit
PENG Hongxiu, LIU Bing, CHEN Dongqiang
Abstract: Photoresist removal is a critical process in integrated circuit manufacturing. With semiconductor technology development, AlSiCu, AlCu and Cu damascene interconnect are adopted in micro-level, sub-micro level, 110 nm and beyond technology. To form BEOL (back-end of line) metal interconnect, different patterning processes are implemented, including wet etch, aluminum metal line and via dry etch, Cu damascene process and then TiN hard mask etch, which need relevant photoresist strpper to meet various post etch residue removal requirements. Solvent-base stripper, hydroxylamine-base stripper, fluoride-containing semi-aqueous stripper and H2O2-containing aqueous base stripper take a dominate role accordingly. The article introduces all of photoresist strippers in general, covers their merits and demerits, and then directs photoresist stripper development in China.
Key words: IC manufacturing, patterning technology, photoresist stripping, process technology development
P33
湿法腐蚀金属铝中胶黏附性技术研究
任萍萍
摘要：湿法腐蚀相对于干法腐蚀操作简单，成本低廉，用时短，产能高等优点在集成电路制造中获得广泛应用。基于湿法腐蚀存在侧向钻蚀的特性，因此对光刻胶和待腐蚀材料黏附性有一定要求。对于金属湿法腐蚀，光刻胶与金属等之间粘附性牢固程度直接影响到湿法腐蚀金属线条的质量，决定金属线条的形貌。如果湿法腐蚀时发生浮胶，光刻胶和待刻蚀物质侧向钻蚀出现不可控现象，金属线条整体或者局部区域变细，会严重影响到产品使用可靠性。通过实验分析金属铝湿法腐蚀烘箱工艺，确定最佳烘箱工艺条件，提高胶的黏附性，并为建立烘箱温度监控提供指导。
关键词：集成电路制造；湿法腐蚀，铝，光刻胶，粘附性，烘箱
中图分类号：TN405 文章编号：1674-2583(2018)07-0033-04
DOI：10.19339/j.issn.1674-2583.2018.07.009
中文引用格式：任萍萍.湿法腐蚀金属铝中胶黏附性技术研究[J]. 集成电路应用, 2018, 35(07): 33-36.
The Investigation to Improve Photo Resistor Adhesion on the Metal Aluminum Surface
REN Pingping
Abstract: The wet etch show more advantage on the simple operation, low cost and short process time with more capacity than that of dry etch. The wet etch has been widely used in the manufacture process. But it is more sensitive on the photo resister adhesion due to the isotropic etch characteristic. For the wet etch on the Aluminum, the adhesion between the photo resister and the metal surface define the profile and width of the metal line. If there is photo resistor lifting during the wet etch process, the metal line will be thinner or broken partly, then show high risk on the reliability. The paper focus on the investigation of the oven process of metal wet etch, set up the best process condition to improve the photo resistor adhesion and share the indication on the oven process monitor.
Key words: IC manufacturing, wet etch, aluminum, photo resistor, adhesion, oven
P37
一种干法刻蚀形成高深宽比 CIS Deep-P Well IMP 掩模的工艺方法的探究
乔夫龙，耿金鹏，许鹏凯
摘要：为有效提升 CIS（CMOS Image Sensor） 器件的 FWC（Full Well Capacity），需要将更高能量的 DWP IMP 注入到更小的 space pattern 区， 相比较单一的光刻胶，引入 TRL（Tri-Layer : PR/SiHM/SOC）并使用干刻方法能有效地形成了 high-aspect-ratio （高深宽比，>20）的图案掩模。其中，DPW IMP 阻挡掩模可以做到更厚，约 4.2 μm， DPW pattern 的 space 可以做到更小，约 0.2 μm。该工艺革新为后续 deeper DPW IMP，pixel shrinking，同时提升 CIS 器件的 FWC 光素性能提供了可能，针对引入 TRL 的干刻工艺的主要建立过程予以技术说明。
关键词：集成电路制造；干刻刻蚀；CMOS 图像传感器；full well capacity；光素性能；high-aspect-ratio；Deep P-well IMP 图案掩模；高深宽比；Tri-Layer PR/SiHM/SOC；像素压缩
中图分类号：TN405 文章编号：1674-2583(2018)07-0037-05
DOI：10.19339/j.issn.1674-2583.2018.07.010
中文引用格式：乔夫龙，耿金鹏，许鹏凯.一种干法刻蚀形成高深宽比CIS Deep-P Well IMP掩模的工艺方法的探究 [J]. 集成电路应用, 2018, 35(07): 37-41.
Research on Dry Etch of forming High-Aspect-Ratio CIS Deep-P Well IMP Mask
QIAO Fulong, GENG Jinpeng, XU Pengkai
Abstract: In order to effectively improve the FWC (Full Well Capacity) of the CIS (CMOS Image Sensor) device, the higher energy DWP IMP is needed to be injected into the smaller space pattern region. The pattern mask of the ratio would be more than 20. Among them, the DPW IMP barrier mask can be thicker, about 4.2 μm, and the DPW pattern space can be smaller, about 0.2 μm. The process is innovative for subsequent deeper DPW IMP, pixel shrinking. At the same time, it is possible to enhance the FWC optical properties of CIS devices, and give technical explanation for the main establishment process of TRL dry etching process.
Key words: IC manufacturing, dry etching, CMOS image sensor, full well capacity, optical properties, high-aspect-ratio, deep P-well IMP mask, high-aspect-ratio, Tri-Layer PR/SiHM/SOC, pixel shrink
P42
二氧化硅湿法刻蚀的片内及片间均匀性的改善
张凌越，王雷
摘要：随着硅片尺寸的加大和工艺尺寸的不断缩小,硅片上薄膜的均匀性对产品的良率影响越来越大, 湿法蚀刻均匀性也逐渐成为影响产品良率的一个关键参数。通过对化学清洗槽中刻蚀剂流速的优化，化学清洗槽之后水槽的去离子水水流量优化，去离子水水管设计优化都可显著改善二氧化硅薄膜湿法刻蚀的片内及片间刻蚀均匀性。二氧化硅薄膜（SiO2）湿法刻蚀速率片内均匀性与化学槽中刻蚀剂流速呈现抛物线关系，片间均匀性随化学槽中刻蚀剂流速增加而减少。当刻蚀剂流速为零时可获得最优的片内及片间刻蚀均匀性。同时，化学清洗槽之后水槽的去离子水的流量和水管设计优化也能改变二氧化硅薄膜湿法刻蚀的片内及片间刻蚀均匀性。
关键词：集成电路制造；湿法刻蚀；SiO2；BOE；均匀性；流速；水流量
中图分类号：TN405 文章编号：1674-2583(2018)07-0042-03
DOI：10.19339/j.issn.1674-2583.2018.07.011
中文引用格式：张凌越，王雷.二氧化硅湿法刻蚀的片内及片间均匀性的改善[J]. 集成电路应用, 2018, 35(07): 42-44.
Study on SiO2 Wet Etch Rate within Wafer and Wafer to Wafer Uniformity Improvement
ZHANG Lingyue, WANG Lei
Abstract: With the wafer size increased and device Critical Dimension continue shrink, the uniformity of film on wafer became the key effect for product CP(Chip Probe), and wet etch uniformity go to key parameter of production CP too. In this paper, we study to improve SiO2 wet etch rate within wafer uniformity and wafer to wafer uniformity by optimized the chemical flow speed , post chemical over flow clean step DI water flow rate and the DI water pipe design. The relation between SiO2 wet etch rate within wafer uniformity and chemical flow speed liked parabola, and wafer to wafer uniformity had positive correlation with chemical flow speed. We can get the best SiO2 wet etch rate uniformity when chemical flow speed is Zero. Post chemical over flow clean step DI water flow rate and the DI water pipe design are key factor to SiO2 wet etch rate uniformity too.
Key words: IC manufacturing, wet etch, SiO2 , BOE, uniformity, flow speed, flow rate
P45
用于 Cu-ULK 工艺的阻挡层抛光液
姚颖，宋凯，蔡鑫元
摘要：随着超低介电常数（ultra-low k）材料被引入新的集成电路制造工艺技术节点，对阻挡层抛光液提出了极大的挑战。阻挡层抛光液必须具有高的阻挡层材料和介电层材料（TEOS）的去除速率，可调节的铜的去除速率以及低的 ULK 材料的去除速率，这样在阻挡层抛光过程中可以很好地停在 ULK 材料上以及获得好的晶圆表面形貌修正能力，且抛光后不影响 ULK 材料的介电常数 k 值。文中通过选用合适的 ULK 材料去除速率抑制剂，解决了抛光后 ULK 材料 k 值变化的问题，采用合适的腐蚀抑制剂，解决了铜表面腐蚀的问题和制约铜去除速率的问题，通过对阻挡层抛光液配方的优化，从而得到一种适用于 Cu-ULK 工艺的阻挡层抛光液。
关键词：集成电路制造；阻挡层；化学机械抛光；超低介电材料；抛光液
中图分类号：TN405 文章编号：1674-2583(2018)07-0045-04
DOI：10.19339/j.issn.1674-2583.2018.07.012
中文引用格式：姚颖,宋凯,蔡鑫元.用于Cu-ULK工艺的阻挡层抛光液[J]. 集成电路应用, 2018, 35(07): 45-48.
Barrier Slurry for Cu-ULK Process
YAO Ying, SONG Kai, CAI Xinyuan
Abstract: With the application of Ultra low-k dielectric material in the advanced nodes, more and more challenges are elevated on barrier CMP. High removal rates of TEOS and barrier films are required to enable an effective removal, while tunable Cu RR and low ULK RR are needed to control the topography and stop in ULK layer. The k value shift of polished ULK also should be minimized. In this paper, we will report a barrier slurry for this application including slurry additives effect on removal rate selectivity, topography and k value. The corrosion control capability is also evaluated by soaking test. Through slurry formulation tuning, an optimal topography with good within wafer and within die non-uniformity are obtained. The control capability in removal rate and selectivity, k value shift of polished ULK, topography, and Cu corrosion were demonstrated.
Key words: IC manufacturing, barrier layer, chemical mechanical polishing (CMP), ultra-low k material (ULK), slurry
P49
高去除速率低碟形凹陷的铜化学机械抛光液
荆建芬，张建，杨俊雅
摘要：随着集成电路技术节点的缩小，需要开发一种具有高去除速率低碟形凹陷的铜化学机械抛光液，而且对抛光后的残留，腐蚀和微划伤等表面缺陷的要求也更严格。这是一种具有优异性能的铜化学机械抛光液。研究了抛光液配方对抛光性能包括去除速率和轮廓，静态腐蚀速率，碟形凹陷，铜残留物的清除能力和铜腐蚀状况的影响。电化学方法也被用来研究和支持这些抛光结果和性能。通过优化配方和抛光工艺，该铜化学机械抛光液能在 > 0.9 μm /min 的去除速率下获得约 300 ? 的碟形凹陷。
关键词：集成电路制造；化学机械抛光；抛光液；铜化学机械抛液；碟形凹陷
中图分类号：TN405 文章编号：1674-2583(2018)07-0049-04
DOI：10.19339/j.issn.1674-2583.2018.07.013
中文引用格式：荆建芬，张建，杨俊雅.高去除速率低碟形凹陷的铜化学机械抛光液[J].集成电路应用, 2018, 35(07): 49-52.
Cu CMP Slurry with High Throughput and Low Dishing
JING Jianfen, ZHANG Jian, YANG Junya
Abstract: With the technology node shrinking, there is a need to develop a Cu slurry with fast rate for high throughput and low dishing for minimal within die and within wafer variation, and stringent defect requirement such as residue, corrosion, and micro scratches. In this paper, we introduce a high performance Cu CMP slurry to overcome these performance challenges in Cu CMP process. The impact of slurry formulation on the slurry performance will be presented under different process conditions, including blanket removal rates/profiles, static etch rates, dishing, Cu residue clearance capability and corrosion status. Electrochemical study was also conducted to support the results and performance. With the optimized formulation and polishing process, the slurry achieves about 300 ? dishing at near 0.9 μm/min Cu removal rate.
Key words: IC manufacturing, chemical mechanical polishing (CMP), slurry, Cu CMP slurry, dishing
P53
金属连线间形成空气隙的改进工艺研究
孙玉红
摘要：在射频开管器件中，导通电阻和关断电容是衡量射频开管器件优良与否的关键参数。而后段金属连线之间的电容对整体的电容有直接影响。为了减小后段金属连线间的电容，铝互联工艺中一般采用在金属连线间形成空气隙的方法。但随着工艺节点的变小，金属连线最小间距相应随之减小，在金属连线侧壁处很难沉积上保护介质，金属容易从侧壁二氧化硅中移动到空气隙中，引发金属互联短路。以射频开关为例，研究了二氧化硅不同的填充方法，通过分析和实验，对填充材料和填充厚度进行了优化，改善了金属连线最小间距处的侧壁保护，同时使射频器件源漏叉指结构区域大间距金属连线处仍然能保持比较小的寄生电容。
关键词：集成电路制造；金属互联；空气隙；寄生电容；射频开关
中图分类号：TN405 文章编号：1674-2583(2018)07-0053-03
DOI：10.19339/j.issn.1674-2583.2018.07.014
中文引用格式：孙玉红.金属连线间形成空气隙的改进工艺研究[J].集成电路应用, 2018, 35(07): 53-55.
Change Airgap Process to Improve the Metal Bridge in RF Switch Devices
SUN Yuhong
Abstract: Ron and Coff is a measure of RF switch device quality. Whereas, the backend interconnect parasitical capacitance has effect on total capacitance of a device. To form SiO2 airgap is a mainly method to decrease the backend interconnect capacitance in IC industry. But with the process node enhanced, it's very difficult to deposit SiO2 on the interconnect sidewall due to more small interconnect space. Al will move to airgap through weak sidewall, leading to interconnect bridge. In this paper, we take 0.13μm RF switch as example, studied the diffident deposition material on the sidewall profile. We changed the deposition material and optimized the deposition thickness to get the good profile both at the minimum and the slightly lager interconnect space. Meanwhile, theparasitical capacitance did not change much.
Key words: IC manufacturing, interconnect, air-gap, parasitical capacitance, RF switch
P56
无线芯片 ADC 电路自动测试平台的设计与实现
徐建忠，罗学金
摘要：集成电路（IC，Integrated Circuit）作为信息产业的基础和核心，设计，测试与制造是其不可分割的几个方面。在通信领域内，模数转换器（Analog to Digital Converter, ADC）作为从模拟调制到数字基带的最后一级电路，分析和验证其性能是保证整个芯片性能的重要手段。提出一种片内 ADC 电路自动测试平台的设计方法，并成功应用到某款无线连接芯片ADC测试中，促进了该芯片的量产。
关键词：集成电路测试；ADC；FPGA；Matlab
中图分类号：TN407 文章编号：1674-2583(2018)07-0056-04
DOI：10.19339/j.issn.1674-2583.2018.07.015
中文引用格式：徐建忠，罗学金.无线芯片ADC电路自动测试平台的设计与实现[J].集成电路应用, 2018, 35(07): 56-59.
Design and Application of an Automatic Test Platform for the ADC Circuits of Wireless Chip
XU Jianzhong, LUO Xuejin
Abstract: IC (Integrated Circuit), as the foundation and core of information industry, has integral parts in design, testing and manufacturing. In the field of communication, Analog to Digital Converter (ADC) is the last?stage?circuit?from analog to digital. It is an important means to analyze and verify its performance as a guarantee of the performance of the whole chip. A design method of automatic test platform for ADC in chip is proposed, and it has been successfully applied to the ADC test of a certain wireless?connectivity?chip, which promotes the?mass?production of the chip.
Key words: integrated circuit testing, ADC, FPGA, Matlab
P60
一种反渗透浓水的处理工艺在纯水制备中的应用
章思远
摘要：电子行业中在纯水制备过程中通常采用反渗透（RO）工艺，但是反渗透在产出除盐水的同时需排放约 25% 的浓水。浓水处理在国内外有多种处理方式：提高回收率、回收用作生产用水、直接或间接排放、综合利用等。本项目将浓水再经反渗透处理使出水直接回流至脱碳水箱供纯水系统使用。通过该工艺将浓水由原 20 m3/h 的排放量下降至 10 m3/h，同时也使原水的使用量下降了 10 m3/h，并使纯水制备流程更优化。
关键词：工业设施 ；水制备；反渗透；浓水；纯水
中图分类号：TQ085.4；X703.1 文章编号：1674-2583(2018)07-0060-03
DOI：10.19339/j.issn.1674-2583.2018.07.016
中文引用格式：章思远.一种反渗透浓水的处理工艺在纯水制备中的应用[J].集成电路应用, 2018, 35(07): 60-62.
Study on Concentrate Treatment Technology in the Preparation of Pure Water
ZHANG Siyuan
Abstract: Reverse osmosis (RO) technology is widely used in the preparation of pure water in electronics industry. The concentrate produced by reverse osmosis (RO) process is approximately 25% of the total volume of the raw water. Some concentrate treatment technologies and methods are used: recovery improving, used as reclaim water, direct or indirect discharge, comprehensive utilization. Concentrate is treated by RO, and the permeate water flow back to FDG tank for pure water preparation .Concentrate flow rate fall to 10 m3/h by 20 m3/h, while raw water usage also fall 10 m3/h.The process of preparation of pure water is optimized.
Key words: industrial facility, water preparation, electron catalyst , reverse osmosis, concentrate, pure water
P63
大型集成电路芯片制造企业的供配电系统运维统计分析与改进
刘凤龙
摘要：通过对某大型集成电路芯片制造企业近年来发生的电气事故进行统计分析，提出了防止电气事故发生的重点措施以及改进方向，旨在提高相关企业供配电系统运维的管理水平。
关键词：集成电路制造；电气事故；运行维护；电能质量；统计分析
中图分类号：TN405；TM72 文章编号：1674-2583(2018)07-0063-04
DOI：10.19339/j.issn.1674-2583.2018.07.017
中文引用格式：刘凤龙.大型集成电路芯片制造企业的供配电系统运维统计分析与改进[J].集成电路应用, 2018, 35(07): 63-66.
Statistical Analysis and Improvement of Operation and Maintenance of Power Supply and Distribution System in Large Scale IC Chip Manufacturing Enterprises
LIU Fenglong
Abstract: The electrical accidents occurred in recent years in a large IC chip manufacturing enterprise were analyzed statistically. The key measures and improvement direction to prevent electric accidents are put forward. The aim is to improve the management level of power supply and distribution system in related enterprises.
Key words: integrated circuit manufacturing, electrical accidents, operation and maintenance, power quality, statistical analysis
创新应用
P67
基于智能卡操作系统的测试系统设计
宋莉莉，陈君
摘要：在智能卡操作系统开发过程中，要遵循软件工程的要求。测试是其中的重要环节。在介绍智能卡操作系统的体系结构基础上，根据 COS 的特点给出了智能卡测试系统设计方案，并且该测试系统在实践中得到了很好的应用。具有较高的实用价值。
关键词：集成电路测试；智能卡操作系统；测试用例；测试脚本；测试库
中图分类号：TN407 文章编号：1674-2583(2018)07-0067-04
DOI：10.19339/j.issn.1674-2583.2018.07.018
中文引用格式：宋莉莉, 陈君.基于智能卡操作系统的测试系统设计[J].集成电路应用, 2018, 35(07): 67-70.
Design of the Test System on Intelligent Card Operating System
SONG Lili, CHEN Jun
Abstract: Soft engineering should be followed in developing smart card's chip operation system. Test is one of the primary parts. First the smart card's chip operation system is introduced, the test scheme is discussed to meet the needs of chip operation system. And the test system has been well applied in practice. This test system has high practical value.
Key words: IC testing, smart card operating system, test case, test , test Library
P71
一种实现人体触摸界面设计的照明开关
李依桐，吴贵文
摘要：如今电子技术与运用日新月异，智能家居控制技术也自然不断地提高，使得智能照明控制器被大量应用。为达成人体触摸界面而设计的集成电路 ASC0121K、ASC0121S 单键触摸感应 IC。此芯片可完成防尘、防水、密封隔离的性能且操作界面设计雅观，可代替机械式触摸按钮。它还可以控制触摸开关，周围电路简单且易于操作。为确定电容的灵敏度，由环境的湿度、温度、表面碎片等所引起的各种干预，芯片都可以自动克服，并防止由电阻、电容的误差所造成的密钥差别。
关键词：集成电路应用；照明；触摸；智能开关；感应
中图分类号：TN409；TM923 文章编号：1674-2583(2018)07-0071-04
DOI：10.19339/j.issn.1674-2583.2018.07.019
中文引用格式：李依桐,吴贵文.一种实现人体触摸界面设计的照明开关[J].集成电路应用, 2018, 35(07): 71-74.
Design of Touch Light Switch with Low Load Starting
LI Yitong, WU Guiwen
Abstract: Now electronic technologies and applications are changing with each passing day, and smart home control technologies are naturally improving, making intelligent lighting controllers widely used. Integrated circuits designed to achieve human touch interface ASC0121K, ASC0121S single touch sensor IC. This chip can complete the performance of dustproof, waterproof, sealing and isolation, and the design of its operation interface is elegant. It can replace the mechanical touch button. It also controls the touch switch and the surrounding circuitry is simple and easy to operate. In order to determine the sensitivity of the capacitor, the chip can automatically overcome various interferences caused by environmental humidity, temperature, and surface debris, and prevent the key difference caused by the errors of the resistor and the capacitor.
Key words: integrated circuit applications, lighting, touch, smart switches, induction
P75
含数据通讯磁测距在 2.4G 手机移动支付业务中的运用
陈君，宋莉莉
摘要：近年来，手机移动支付作为被运营商、金融机构、制造商等均看好的一项为个人用户服务的业务，发展速度迅猛。由中国移动通信集团主推的2.4G全卡方案，在近距离通信方面，号称已经能够有效地控制距离，保证支付的安全性。但是，经过实际测试，发现目前采用的技术方法存在一定的缺陷。提出一种基于含数据通信磁测距的方案，可以既解决距离控制问题，又保证了支付的安全性。
关键词：集成电路应用；手机；移动支付；磁测距；2.4G；安全通讯
中图分类号：TN409 文章编号：1674-2583(2018)07-0075-04
DOI：10.19339/j.issn.1674-2583.2018.07.020
中文引用格式：陈君，宋莉莉.含数据通讯磁测距在2.4G手机移动支付业务中的运用[J].集成电路应用, 2018, 35(07): 75-78.
Application of Magnetic Distance Measurement with Data Communication in Mobile Payment Service of 2.4G Mobile Phone
CHEN Jun, SONG Lili
Abstract: In recent years, mobile phone payment as a service for individual users, which is optimistic by operators, financial institutions and manufacturers, is developing rapidly. The 2.4G full card scheme, pushed by China Mobile Communications Group, is known to have been able to effectively control the distance and ensure the security of the payment in the close range communication. However, after practical testing, it is found that there are some defects in the technology adopted at present. In this paper, a scheme of magnetic distance measurement based on data communication is proposed, which can solve the problem of distance control and guarantee the security of payment.
Key words: integrated circuit application, mobile phone, mobile payment, magnetic distance measurement, 2.4G, secure communication
P79
热处理工艺对正温度系数热敏电阻PTCR 批量生产良率影响的研究
曾光
摘要：通过固相法制备的 BaTiO3 系正温度系数热敏电阻（PTCR）,由于受到批量原料纯度一致性、批量操作工艺一致性、烧结温度区域可控性以及热敏电阻本身的双晶特性影响，批量生产的热敏电阻片容易出现批次与批次之间的不稳定性以及长期以来困扰生产的产品室温电阻良率问题。本文通过对片式正温度系数热敏电阻（PTCR）烧成瓷片进行热处理，有效地提高了产品良率，同时瓷片密度、电性能、PTC 效应等应用关键参数满足要求。
关键词：热敏电阻；双晶；室温电阻率；PTC效应
中图分类号：TN304 文章编号：1674-2583(2018)07-0078-03
DOI：10.19339/j.issn.1674-2583.2018.07.021
中文引用格式：曾光.热处理工艺对正温度系数热敏电阻PTCR批量生产良率影响的研究[J].集成电路应用, 2018, 35(07): 79-81.
Effect of Heat Treatment Process on Yield of Positive Temperature Coefficient Thermistor in PTCR Batch Production
ZENG Guang
Abstract: Through the solid phase of BaTiO3 is prepared by the positive temperature coefficient thermistor (PTCR), due to the batch raw material purity consistency, batch operation process consistency, sintering temperature area controllability and twin characteristic of the thermistor itself influence, batch production of thermistor prone to instability between batch and batch products at room temperature resistance and long production yield. This article through to the chip positive temperature coefficient thermistor (PTCR) firing ceramics for heat treatment, effectively improve the product yield, at the same time, electronic, PTC ceramics density effect applications such as key parameters meet the requirements.
Key words: thermistor, twin crystal, room temperature resistivity, PTC effect
P82
交错并联型有源功率因数校正电路的研究
周伟
摘要：针对 Boost 型交错并联的有源功率因数校正电路展开研究。首先，分析了电路的工作原理，给出了主电路参数设计方法和器件选型的参数依据。其次，以跨导放大器构建的补偿网络为例，给出了控制参数的设计方法。最后，以 3.3 kW 功率的两路 Boost 交错并联型有源功率因数校正电路为算例，通过仿真验证了主电路和控制参数设计方法的有效性。
关键词：有源功率因数校正；Boost；交错并联；双环控制
中图分类号：TM46 文章编号：1674-2583(2018)07-0082-04
DOI：10.19339/j.issn.1674-2583.2018.07.022
中文引用格式：周伟.交错并联型有源功率因数校正电路的研究[J].集成电路应用, 2018, 35(07): 82-84+87.
Research on Interleaved Shunt Active Power Factor Correction Circuit
ZHOU Wei
Abstract: The Boost active power factor correction circuit is studied. First, the working principle of the circuit is analyzed, and the parameter design method of the main circuit and the parameter basis of device selection are given. Secondly, taking the compensation network constructed by transconductance amplifier as an example, the design method of control parameters is given. Finally, the effectiveness of the main circuit and the control parameter design method is verified by the example of a 3.3 kW power Boost staggered parallel active power factor correction circuit.
Key words: active power factor correction, Boost, interleaving, double loop control
P85
浅析输电线路防雷技术与维护措施
王晶
摘要：我国地域广阔，输电线路复杂多变，影响因素众多，其中雷击带来的危害巨大，是需要高度重视与解决的问题。分析概述输电线路雷击危害，探讨输电线路防雷技术与维护措施。
关键词：输电线路；防雷技术；维护措施
中图分类号：TM863 文章编号：1674-2583(2018)07-0085-03
DOI：10.19339/j.issn.1674-2583.2018.07.023
中文引用格式：王晶.浅析输电线路防雷技术与维护措施[J].集成电路应用, 2018, 35(07): 85-87.
Lightning Protection Technology and Maintenance Measures for Transmission Lines
WANG Jing
Abstract: Because of the vast area of our country, the transmission line is complicated and changeable, and the influence factors are numerous, and the damage caused by lightning strikes is great. It is a problem which needs to be paid more attention and solved. The lightning damage of transmission lines is analyzed and the lightning protection technology and maintenance measures for transmission lines are discussed.
Key words: transmission line, lightning protection technology, maintenance measures
P88
海菜加工工艺漏电保护探讨
韩景新
摘要：海菜加工行业大多设置在沿海地区，靠近码头处，加工过程中要采取煮烫菜等工艺，因此工作场所地面潮湿积水为常态，导致用电设备和电缆绝缘性都有所下降，操作人员触电的可能性增加。从用电系统装置上防止触电事故发生，进行探讨。
关键词：计量测试技术；漏电保护；潮湿环境
中图分类号：TM77 文章编号：1674-2583(2018)07-0088-02
DOI：10.19339/j.issn.1674-2583.2018.07.024
中文引用格式：韩景新.海菜加工工艺漏电保护探讨[J].集成电路应用, 2018, 35(07): 88-89.
Discussion on the Leakage Protection in the Seaweed Processing Industry
HAN Jingxin
Abstract: Because seaweed processing industry is mostly located in coastal areas, near the wharf, processing and cooking process should be done. The wet ground water in the workplace is normal, resulting in a decrease in the insulation of the electrical equipment and cables. Therefore, the possibility of electric shock is increased. This paper probes into the occurrence of electric shock accidents from the power system installations.
Key words: measurement and test technology, leakage protection, wet environment
P90
探析船舶电力推进变频装置控制方法
李利国
摘要：所谓电力推进系统，也就是通过功率变换器驱动，从而实现电机推动螺旋桨运行的系统。相比传统推进模式，其更加安全，操作性能更强，进而在船舶动力系统之中得到广泛的应用。通过针对船舶电力推进变频装置控制策略进行分析，探析可以满足船舶的运行需求的解决方案。
关键词：控制系统；船舶；电力；推进变频装置
中图分类号：U664.14 文章编号：1674-2583(2018)07-0090-03
DOI：10.19339/j.issn.1674-2583.2018.07.025
中文引用格式：李利国.探析船舶电力推进变频装置控制方法[J].集成电路应用, 2018, 35(07): 90-92.
Control of Frequency Conversion Device for Ship Electric Propulsion
LI Liguo
Abstract: The so-called electric propulsion system is a system driven by a power converter to drive the motor to drive the propeller. Compared with the traditional propulsion model, it is safer and more maneuverable, so it is widely used in ship power system. This paper mainly analyzes the control strategy of ship electric power propulsion frequency conversion device, hoping to meet the operation demand of ship.
Key words: control system, ship, power, propulsion frequency conversion device
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